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september 2015 docid025806 rev 2 1 / 15 this is information on a product in full production. www.st.com stf11n65m2, STFI11N65M2 n - channel 650 v, 0.6 typ., 7 a mdmesh? m2 power mosfets in to - 220fp and i2pakfp packages datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot stf11n65m2 650 v 0.68 7 a 25 w STFI11N65M2 ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener - protected applications ? switching applications description these devices are n - channel power mosfet s developed using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, these devices exhibit low on - resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converter s. table 1: device summary order code marking package packing stf11n65m2 11n65m2 to - 220fp tube STFI11N65M2 i2pakfp t o - 22 0 f p i 2 p akfp (to-281)
contents stf11n65m2, STFI11N65M2 2 / 15 docid025806 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 to - 220fp package informatio n ................................ ...................... 10 4.2 i2pakfp (to - 281) package information ................................ ......... 12 5 revision history ................................ ................................ ............ 14
stf11n65m2, STFI11N65M2 electrical ratings docid025806 rev 2 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d (1) drain current (continuous) at t case = 25 c 7 a drain current (continuous) at t case = 100 c 4.4 i dm (2) drain current (pulsed) 28 a p tot total dissipation at t case = 25 c 25 w dv/dt (3) (4) peak diode recovery voltage slope 15 v/ns dv/dt (5) mosfet dv/dt ruggedness 50 v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s, t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) the value is rated according to r thj - case and limited by package. (2) pulse width limited by t jmax . (3) starting t j = 25 c, i d = i as , v dd = 50 v. (4) i sd 7 a, di/dt=400 a/s, v ds peak < v (br)dss v dd = 80% v (br)dss . (5) v ds 520 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 5 c/w r thj - amb thermal resistance junction - ambient 62.5 table 4: avalanche characteristics symbol parameter value unit i ar (1) avalanche current, repetitive or not repetitive 1.5 a e as (2) single pulse avalanche energy 110 mj notes: (1) pulse width limited by t jmax . (2) starting t j = 25 c, i d = i ar , v dd = 50 v.
electrical characteristics stf11n65m2, STFI11N65M2 4 / 15 docid025806 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0 v, v ds = 650 v 1 a v gs = 0 v, v ds = 650 v, t case = 125 c 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 3.5 a 0.6 0.68 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 410 - pf c oss output capacitance - 20 - c rss reverse transfer capacitance - 0.95 - c oss eq. (1) equivalent output capacitance v ds = 0 to 520 v, v gs = 0 v - 83 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 6.4 - q g total gate charge v dd = 520 v, i d = 7 a, v gs = 10 v (see figure 15: "test circuit for gate charge behavior" ) - 12.5 - nc q gs gate - source charge - 3.2 - q gd gate - drain charge - 5.8 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 325 v, i d = 3.5 a r g = 4.7 , v gs = 10 v (see figure 14: "test circuit for resistive load switching times" and figure 19: "switching time waveform" ) - 9.5 - ns t r rise time - 7.5 - t d(off) turn - off delay time - 26 - t f fall time - 15 -
stf11n65m2, STFI11N65M2 electrical characteristics docid025806 rev 2 5 / 15 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 7 a i sdm (1) source - drain current (pulsed) - 28 a v sd (2) forward on voltage v gs = 0 v, i sd = 7 a - 1.6 v t rr reverse recovery time i sd = 7 a, di/dt = 100 a/s, v dd = 60 v (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 318 ns q rr reverse recovery charge - 2.5 c i rrm reverse recovery current - 15.5 a t rr reverse recovery time i sd = 7 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 437 ns q rr reverse recovery charge - 3.2 c i rrm reverse recovery current - 15 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics stf11n65m2, STFI11N65M2 6 / 15 docid025806 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
stf11n65m2, STFI11N65M2 electrical characteristics docid025806 rev 2 7 / 15 figure 8 : capacitance variations figure 9 : normalized gate thresho ld voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : output capacitance stored energy figure 13 : source - drain diode forward characteristics
test circuits stf11n65m2, STFI11N65M2 8 / 15 docid025806 rev 2 3 test circuits figure 14 : test circuit for resistive l oad switching times figure 15 : test circuit for gate charge behavior figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time waveform
stf11n65m2, STFI11N65M2 package information docid025806 rev 2 9 / 15 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information stf11n65m2, STFI11N65M2 10 / 15 docid025806 rev 2 4.1 to - 220fp package information figure 20 : to - 220fp package outline
stf11n65m2, STFI11N65M2 package information docid025806 rev 2 11 / 15 table 9: to - 220fp package mechanical data dim. mm min. typ. max. a 4.4 4.6 b 2.5 2.7 d 2.5 2.75 e 0.45 0.7 f 0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package information stf11n65m2, STFI11N65M2 12 / 15 docid025806 rev 2 4.2 i2pakfp (to - 281) package information figure 21 : i2pakfp (to - 281) package outline 8291506 re v . c
stf11n65m2, STFI11N65M2 package information docid025806 rev 2 13 / 15 table 10: i2pakfp (to - 281) mechanical data dim. mm min. typ. max. a 4.40 - 4.60 b 2.50 2.70 d 2.50 2.75 d1 0.65 0.85 e 0.45 0.70 f 0.75 1.00 f1 1.20 g 4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.50 7.60 7.70
revision history stf11n65m2, STFI11N65M2 14 / 15 docid025806 rev 2 5 revision history table 11: document revision history date revision changes 09 - may - 2014 1 first release. 08 - sep - 2015 2 text and formatting changes throughout document. on cover page: - updated title and features in section electrical characteristics : - updated and renamed table static (was on /off states) updated section electrical characteristics (curves) updated and renamed section package information (was package mechanical data)
stf11n65m2, STFI11N65M2 docid025806 rev 2 15 / 15 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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